Vitreous Chalcogenide Gesey Thin Films Obtained By Plasma Enhanced Chemical Vapor Deposition

M. Ribes; B. Cros; P. Julien

doi:10.1117/12.975613

17 September 1987 Vitreous Chalcogenide Gesey Thin Films Obtained By Plasma Enhanced Chemical Vapor Deposition

M. Ribes, B. Cros, P. Julien

Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975613
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

GeSe glass films have been deposited in a hot wall glow-discharge machine using germaneY(GeH₄) hydrogen selenide (H₂Se) and nitrogen as a carrier gas. Eighteen four inches wafers were processed simultaneously. To obtain the best results the parameters such as pressure, temperature, nature of carrier gas, gas flow, plasma power have been optimized.

Citation Download Citation

M. Ribes, B. Cros, and P. Julien "Vitreous Chalcogenide Gesey Thin Films Obtained By Plasma Enhanced Chemical Vapor Deposition", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); https://doi.org/10.1117/12.975613

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