Low Loss Optical Waveguides By Direct Ti Ion Implantation In LiNbO3

Paul R. Ashley; Chris Buchal

doi:10.1117/12.942341

10 March 1988 Low Loss Optical Waveguides By Direct Ti Ion Implantation In LiNbO₃

Paul R. Ashley, Chris Buchal

Proceedings Volume 0835, Integrated Optical Circuit Engineering V; (1988) https://doi.org/10.1117/12.942341
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

The maximum Ti concentration and corresponding An as well as the minimum waveguide size is limited in diffused waveguides by the diffusion coefficient. Ion implantation offers an interesting alternative with a clear advantage at larger wavelengths for smaller waveguide cross-sections. Both planar and channel waveguides have been fabricated by ion implantation of Ti into a LiNb0₃ substrate. A solid phase epitaxial regrowth of the implant induced crystal damage resulted in excellent waveguides with propagation losses of< 1 db/cm. Guide depth of <1 micron and An of 0.04 have been achieved. Fabrication techniques and optical properties of the waveguides are presented.

Citation Download Citation

Paul R. Ashley and Chris Buchal "Low Loss Optical Waveguides By Direct Ti Ion Implantation In LiNbO₃", Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); https://doi.org/10.1117/12.942341

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