Reliability Of AlGaas/Gaas Laser Diodes Grown By Metalorganic Chemical Vapor Deposition

D. Dreisewerd; W. Fritz; D. Begley; S. Schwedt; G. Elliott

doi:10.1117/12.976556

2 May 1988 Reliability Of AlGaAs/GaAs Laser Diodes Grown By Metalorganic Chemical Vapor Deposition

D. Dreisewerd, W. Fritz, D. Begley, S. Schwedt, G. Elliott

Proceedings Volume 0885, Free-Space Laser Communication Technologies; (1988) https://doi.org/10.1117/12.976556
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

The results from an extensive life test of wide stripe laser diodes operating in the 808 nm wavelength region and at a heatsink temperature of -20°C are reported. Double heterostructure laser diode wafer material, grown by metalorganic chemical vapor deposition (MOCVD) was processed with 60 micron wide oxide stripes and 150 micron long high reflectivity/passivated cavities. Devices were mounted p-side down on BeO heatsinks with indium solder. Stringent screening and burn-in criteria were applied to the device population prior to selection for long term test. The lasers were operated constant current at 1.4 times threshold (approximately 50 mW initial output power). Based on gradual degradation of output power, during the 10,000 hour test, a median lifetime of greater than 30 years is projected.

Citation Download Citation

D. Dreisewerd, W. Fritz, D. Begley, S. Schwedt, and G. Elliott "Reliability Of AlGaAs/GaAs Laser Diodes Grown By Metalorganic Chemical Vapor Deposition", Proc. SPIE 0885, Free-Space Laser Communication Technologies, (2 May 1988); https://doi.org/10.1117/12.976556

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