Presentation + Paper
16 May 2017 Evidence of carrier localization in InAsSb/InSb digital alloy nBn detector
Brian J. Pepper, Alexander Soibel, David Z. Ting, Cory J. Hill, Arezou Khoshakhlagh, Anita M. Fisher, Sam A. Keo, Sarath D. Gunapala
Author Affiliations +
Abstract
Recently we have demonstrated a novel method of extending the cut-off wavelength of InAsSb nBn detectors, by incorporating a series of monolayers of InSb. Here we study photoluminescence and minority carrier lifetime of this InAsSb/InSb digital alloy. While increasing temperature from 15 K to 40 K we show a 14 meV blue shift of the photoluminescence peak energy and a decrease in lifetime. This deviation from the expected Varshni empirical relation indicates strong carrier localization. We contrast to photoluminescence and lifetime results in bulk InAsSb. We discuss implications of this localization for design of digital alloy InAsSb/InSb nBn detectors.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian J. Pepper, Alexander Soibel, David Z. Ting, Cory J. Hill, Arezou Khoshakhlagh, Anita M. Fisher, Sam A. Keo, and Sarath D. Gunapala "Evidence of carrier localization in InAsSb/InSb digital alloy nBn detector", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771P (16 May 2017); https://doi.org/10.1117/12.2263064
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Luminescence

Sensors

Temperature metrology

Antimony

Photodetectors

Infrared detectors

Infrared photography

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