Circuit Analysis In ICS Using The Scanning Laser Microscope

J. Quincke; E. Plies; J. Otto

doi:10.1117/12.950347

9 February 1989 Circuit Analysis In ICS Using The Scanning Laser Microscope

J. Quincke, E. Plies, J. Otto

Proceedings Volume 1028, Scanning Imaging; (1989) https://doi.org/10.1117/12.950347
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

The laser probe of the scanning laser microscope generates electron-hole pairs in the IC semiconductor material which are separated at inversely-biased pn-junctions and can then be detected as photocurrent at external terminals. This OBIC (Optical Beam Induced Current) effect provides the physical basis for the localization and sensitivity measurements of the undesired latch-up in CMOS devices. The laser probe can also be used to measure logic-level time diagrams at the internal nodes of an IC. In addition, the scanning laser probe can be used to stimulate and localize malfunctions when the IC is operated at its marginal conditions.

Citation Download Citation

J. Quincke, E. Plies, and J. Otto "Circuit Analysis In ICS Using The Scanning Laser Microscope", Proc. SPIE 1028, Scanning Imaging, (9 February 1989); https://doi.org/10.1117/12.950347

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