Paper
18 November 1989 Analysis Of A Novel Monolithic GaAs MIS Phase Shifter
M. E. McKaughan, F. C. Jain
Author Affiliations +
Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978473
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
Analysis of a novel monolithic GaAs MIS phase shifter is presented. A quasi-TEM transmission line model, valid for the slow-wave regime, is used to predict operation of the device as an electronically controllable phase shifter. Device parameters such as phase shift, characteristic impedance, and insertion loss are computed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. E. McKaughan and F. C. Jain "Analysis Of A Novel Monolithic GaAs MIS Phase Shifter", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978473
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Cited by 1 scholarly publication.
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KEYWORDS
Phase shifts

Antennas

Capacitance

Gallium arsenide

Resistance

Instrument modeling

Inductance

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