Characterization of Si-MOSFET CMOS devices for detection at 170 to 250 GHz

Katherine E. Seery; Zoran Ninkov; Jack Horowitz; Daniel Newman; Kenneth Fourspring; Andrew Sacco; Paul Lee; Craig McMurtry; Judith Pipher; Zeljko Ignjatovic; Moeen Hassanalieragh

doi:10.1117/12.2288454

23 February 2018 Characterization of Si-MOSFET CMOS devices for detection at 170 to 250 GHz

Katherine E. Seery, Zoran Ninkov, Jack Horowitz, Daniel Newman, Kenneth Fourspring, Andrew Sacco, Paul Lee, Craig McMurtry, Judith Pipher, Zeljko Ignjatovic, Moeen Hassanalieragh

Author Affiliations +

Proceedings Volume 10531, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI; 105311R (2018) https://doi.org/10.1117/12.2288454
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Rochester Institute of Technology (RIT) and its collaborators at the University of Rochester and Harris Corporation are developing a room-temperature imaging Terahertz (THz) frequency detector using Si-MOSFET (Silicon Metal Oxide Semiconductor Field Effect Transistor) CMOS devices. They are implemented into a focal plane imaging array for use in many applications, such as transmission or penetration imaging and spectroscopy. Technology for THz detection is often extremely costly, due to either expensive detector materials or cryogenic cooling systems. However, the devices tested here are low-cost due to the use of conventional room temperature silicon CMOS technology. The devices operate from 170 to 250 GHz with an additional detector design has been fabricated for 30 THz (10 microns wavelength). Results are presented for the initial testing of single test structure FETs. These devices were designed with several different antenna configurations and a range of MOSFET design variations for evaluation. The primary goal of the work presented here is to determine the optimized detector design for the subsequent focal plane array implementation based on the largest responsivities and lowest noise-equivalent power (NEP). Transmission testing of the devices yields responsivities of about 100 to 1000 V/W and a NEP of about 0.5 to 10 nW·Hz^-1/2. Through this evaluation and by utilizing signal amplification on the chip, signal modulation at higher frequencies, and smaller process sizes the performance of these devices will continue to improve in future designs.

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Katherine E. Seery, Zoran Ninkov, Jack Horowitz, Daniel Newman, Kenneth Fourspring, Andrew Sacco, Paul Lee, Craig McMurtry, Judith Pipher, Zeljko Ignjatovic, and Moeen Hassanalieragh "Characterization of Si-MOSFET CMOS devices for detection at 170 to 250 GHz", Proc. SPIE 10531, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI, 105311R (23 February 2018); https://doi.org/10.1117/12.2288454

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