GaN laser diodes for high-power optical integration and quantum technologies

S. P. Najda; P. Perlin; T. Suski; L. Marona; S. Stanczyk; P. Wisniewski; R. Czernecki; D. Schiavon; M. Leszczyński

doi:10.1117/12.2286044

23 February 2018 GaN laser diodes for high-power optical integration and quantum technologies

S. P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, P. Wisniewski, R. Czernecki, D. Schiavon, M. Leszczyński

Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 1053217 (2018) https://doi.org/10.1117/12.2286044
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

GaN laser diodes have the potential to be a key enabling technology since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the u.v. to the visible. Novel applications include high power laser bars for optical pumping, to laser sources for quantum technologies based on atom interferometry, such as next generation optical clocks and gravity sensors.

We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for optical clocks and atom interferometry systems. This includes the [5s²S_1/2-5p²P_1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s₂ ¹S₀-5p¹P₁] cooling transition in neutral strontium clocks at 461 nm and the [5s²s_1/2 – 6p²P_3/2] transition in rubidium at 420 nm.

In addition, we report our latest results on tapered high power GaN laser diodes, for i) optical amplifiers, and ii) optimising the optical power of the device by reducing filamentation and hence avoiding catastrophic optical mirror damage (COMD).

Conference Presentation

Citation Download Citation

S. P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, P. Wisniewski, R. Czernecki, D. Schiavon, and M. Leszczyński "GaN laser diodes for high-power optical integration and quantum technologies", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053217 (23 February 2018); https://doi.org/10.1117/12.2286044

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available