Raman Scattering And Photoluminescence Characterization Of ZnSe-ZnS[sub]x[/sub]Se[sub]1-x[/sub] Superlattices And ZnSe/GaAs Interfaces

D. J. Olego; K. Shahzad

doi:10.1117/12.951564

5 July 1989 Raman Scattering And Photoluminescence Characterization Of ZnSe-ZnS_xSe_1-x Superlattices And ZnSe/GaAs Interfaces

D. J. Olego, K. Shahzad

Author Affiliations +

Proceedings Volume 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology; (1989) https://doi.org/10.1117/12.951564
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Raman scattering in conjunction with photoluminescence spectroscopy were applied to investigate strain relaxation, lattice dynamics and band offsets in ZnSe-ZnSxSe1-x strained-layer superlattices, and the effects of a ZnSe overlayer on the optoelectronic properties of GaAs surfaces in ZnSe/GaAs heterostructures.

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D. J. Olego and K. Shahzad "Raman Scattering And Photoluminescence Characterization Of ZnSe-ZnS_xSe_1-x Superlattices And ZnSe/GaAs Interfaces", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); https://doi.org/10.1117/12.951564

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