Understanding the origin of parasitic absorption in GaAs double heterostructures

Nathan Giannini; Zhou Yang; Alexander R. Albrecht; Mansoor Sheik-Bahae

doi:10.1117/12.2292269

22 February 2018 Understanding the origin of parasitic absorption in GaAs double heterostructures

Nathan Giannini, Zhou Yang, Alexander R. Albrecht, Mansoor Sheik-Bahae

Proceedings Volume 10550, Optical and Electronic Cooling of Solids III; 105500F (2018) https://doi.org/10.1117/12.2292269
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaAs|GaInP double heterostructures (DHS) has been elusive. This is primarily due to the parasitic absorption, which originates from the GaInP passivation layers at long wavelengths. In samples with thin GaInP passivation layers, we report an EQE of 99%, approaching theoretical requirement for being heat neutral. Additionally, we investigate the EQE of MBE-grown GaAs|AlGaAs DHS versus temperature; the results compare well with that of GaAs|GaInP at and below 150 K. Also, initial measurements of parasitic absorption at shorter wavelengths is presented.

Conference Presentation

Citation Download Citation

Nathan Giannini, Zhou Yang, Alexander R. Albrecht, and Mansoor Sheik-Bahae "Understanding the origin of parasitic absorption in GaAs double heterostructures", Proc. SPIE 10550, Optical and Electronic Cooling of Solids III, 105500F (22 February 2018); https://doi.org/10.1117/12.2292269

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