Silicon carbide transparent chips for compact atomic sensors

L. Huet; M. Ammar; E. Morvan; N. Sarazin; J.-P. Pocholle; J. Reichel; C. Guerlin; S. Schwartz

doi:10.1117/12.2309254

5 January 2018 Silicon carbide transparent chips for compact atomic sensors

L. Huet, M. Ammar, E. Morvan, N. Sarazin, J.-P. Pocholle, J. Reichel, C. Guerlin, S. Schwartz

Author Affiliations +

Proceedings Volume 10564, International Conference on Space Optics — ICSO 2012; 105643J (2018) https://doi.org/10.1117/12.2309254
Event: International Conference on Space Optics 2012, 2012, Ajaccio, Corsica, France

Abstract

Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

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L. Huet, M. Ammar, E. Morvan, N. Sarazin, J.-P. Pocholle, J. Reichel, C. Guerlin, and S. Schwartz "Silicon carbide transparent chips for compact atomic sensors", Proc. SPIE 10564, International Conference on Space Optics — ICSO 2012, 105643J (5 January 2018); https://doi.org/10.1117/12.2309254

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