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13 March 2018 Complex EUV imaging reflectometry: spatially resolved 3D composition determination and dopant profiling with a tabletop 13nm source
Christina L. Porter, Michael Tanksalvala, Michael Gerrity, Galen P. Miley, Yuka Esashi, Naoto Horiguchi, Xiaoshi Zhang, Charles S. Bevis, Robert Karl Jr., Peter Johnsen, Daniel E. Adams, Henry C. Kapteyn, Margaret M. Murnane
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Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 105850M (2018) https://doi.org/10.1117/12.2297464
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States
Abstract
With increasingly 3D devices becoming the norm, there is a growing need in the semiconductor industry and in materials science for high spatial resolution, non-destructive metrology techniques capable of determining depth-dependent composition information on devices. We present a solution to this problem using ptychographic coherent diffractive imaging (CDI) implemented using a commercially available, tabletop 13 nm source. We present the design, simulations, and preliminary results from our new complex EUV imaging reflectometer, which uses coherent 13 nm light produced by tabletop high harmonic generation. This tool is capable of determining spatially-resolved composition vs. depth profiles for samples by recording ptychographic images at multiple incidence angles. By harnessing phase measurements, we can locally and nondestructively determine quantities such as device and thin film layer thicknesses, surface roughness, interface quality, and dopant concentration profiles. Using this advanced imaging reflectometer, we can quantitatively characterize materials-sciencerelevant and industry-relevant nanostructures for a wide variety of applications, spanning from defect and overlay metrology to the development and optimization of nano-enhanced thermoelectric or spintronic devices.
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Christina L. Porter, Michael Tanksalvala, Michael Gerrity, Galen P. Miley, Yuka Esashi, Naoto Horiguchi, Xiaoshi Zhang, Charles S. Bevis, Robert Karl Jr., Peter Johnsen, Daniel E. Adams, Henry C. Kapteyn, and Margaret M. Murnane "Complex EUV imaging reflectometry: spatially resolved 3D composition determination and dopant profiling with a tabletop 13nm source", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105850M (13 March 2018); https://doi.org/10.1117/12.2297464
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KEYWORDS
Reflectometry
Reflectivity
Extreme ultraviolet
Silicon
Coherence imaging
Cameras
3D image processing
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