Novel EUV resist materials for 7 nm node and beyond

Hajime Furutani; Michihiro Shirakawa; Wataru Nihashi; Kyohei Sakita; Hironori Oka; Mitsuhiro Fujita; Tadashi Omatsu; Toru Tsuchihashi; Nishiki Fujimaki; Toru Fujimori

doi:10.1117/12.2297076

13 March 2018 Novel EUV resist materials for 7 nm node and beyond

Hajime Furutani, Michihiro Shirakawa, Wataru Nihashi, Kyohei Sakita, Hironori Oka, Mitsuhiro Fujita, Tadashi Omatsu, Toru Tsuchihashi, Nishiki Fujimaki, Toru Fujimori

Author Affiliations +

Proceedings Volume 10586, Advances in Patterning Materials and Processes XXXV; 105860G (2018) https://doi.org/10.1117/12.2297076
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

For semiconductor device manufacturing, line width roughness (LWR) and defect reduction is one of the most important items to obtain high yield. In this study we described the development of novel high absorption resists for use in extreme ultra violet (EUV) lithography system and its LWR and nano-bridge reduction capability. Herein decomposition rates of photo acid generator (PAG) and several high EUV absorption compounds were studied to clarify inefficient pass on acid generation mechanism. As a result, it is revealed that existence of decomposition pass on high EUV absorption compounds degenerates PAG decomposition efficiency. New high absorption materials were synthesized with taking into account its decomposition durability and its lithographic performance were investigated. 15-20% dose reduction keeping its LWR value and nano-bridge reduction were observed even at lower dose condition compared to non-high absorption platform.

Citation Download Citation

Hajime Furutani, Michihiro Shirakawa, Wataru Nihashi, Kyohei Sakita, Hironori Oka, Mitsuhiro Fujita, Tadashi Omatsu, Toru Tsuchihashi, Nishiki Fujimaki, and Toru Fujimori "Novel EUV resist materials for 7 nm node and beyond", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860G (13 March 2018); https://doi.org/10.1117/12.2297076

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