GaInAsSb/A1GaAsSb Injection Lasers For Remote Sensing Applications

Siamak Forouhar; Jeffrey Cody; Joseph Katz

doi:10.1117/12.951859

25 July 1989 GaInAsSb/A1GaAsSb Injection Lasers For Remote Sensing Applications

Siamak Forouhar, Jeffrey Cody, Joseph Katz

Proceedings Volume 1062, Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing; (1989) https://doi.org/10.1117/12.951859
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Double heterostructures of InGaAsSb/AlGaAsSb quaternary alloys on (100) GaSb substrates were grown by the liquid phase epitaxy (LPE) technique. Room temperature operation near 2.1 μm wavelength has been achieved under pulsed conditions with pulsed threshold current density of 7kAcm^-2.

Citation Download Citation

Siamak Forouhar, Jeffrey Cody, and Joseph Katz "GaInAsSb/A1GaAsSb Injection Lasers For Remote Sensing Applications", Proc. SPIE 1062, Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing, (25 July 1989); https://doi.org/10.1117/12.951859

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available