Paper
14 May 2018 0.16 μm BCD single-photon avalanche diode with 30 ps timing jitter, high detection efficiency and low noise
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Abstract
CMOS SPADs are nowadays an established imaging technology for applications requiring single-photon sensitivity in a compact form-factor (e.g. three-dimensional LIDAR imaging and fluorescence lifetime FLIM microscopy). However, we aimed at further enhance overall SPAD performances, by exploiting smart power technologies, such as the BCD (Bipolar-CMOS-DMOS) one. We achieved the present state-of-the-art SPADs fabricated in the 0.16 μm BCD technology by STMicroelectronics, attaining >60% photon detection efficiency at 500 nm, dark count rate density < 0.2 cps/μm2, and less than 30 ps FWHM timing jitter.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mirko Sanzaro, Paolo Gattari, Federica Villa, Alberto Tosi, Giuseppe Croce, and Franco Zappa "0.16 μm BCD single-photon avalanche diode with 30 ps timing jitter, high detection efficiency and low noise", Proc. SPIE 10659, Advanced Photon Counting Techniques XII, 106590D (14 May 2018); https://doi.org/10.1117/12.2304851
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Cited by 2 scholarly publications.
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KEYWORDS
Picosecond phenomena

Single photon detectors

Avalanche photodiodes

LIDAR

Photodetectors

CMOS sensors

Doping

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