Exciton-plasmon interaction in two-dimensional semiconductors for refined light emission  (Conference Presentation)

Jeongyong Kim

doi:10.1117/12.2320390

17 September 2018 Exciton-plasmon interaction in two-dimensional semiconductors for refined light emission (Conference Presentation)

Jeongyong Kim

Author Affiliations +

Proceedings Volume 10722, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVI; 107220Z (2018) https://doi.org/10.1117/12.2320390
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

Transition dichalcogenide monolayer (1L-TMD) such as MoS2, MoSe2, WS2 and WSe2 are promising 2D semiconductors with visible or near-IR wavelength emission, suitable for the nanophotonics applications including quantum optical emitters. 1L-TMDs offer advantages such as direct growth on wafers, the ability to tune the properties of the material by controlling the layer thickness, electrostatic doping, and hetero-stacking. Atomically thin, flat geometry of two-dimensional (2D) semiconductors provides the ideal coupling configuration between plasmons and excitons, leading to a new realm of light-matter interaction. It has been shown that the simple hybrid of placing Ag nanowires on MoS2 monolayers forms a highly efficient plasmon emitter and detector. Optoelectronic applications in two-dimensional (2D) transition-metal dichalcogenides (TMDs) are still limited by the weak light absorption, and moreover peak positions and shapes of exciton complexes are sensitively perturbed by varying excitation conditions, inherent from nature of atomically thin layers. Here we show that coupling of excitons with plasmons can spectrally refine the exciton emission of 1L-TMDs, maintaining contribution of only neutral excitons even with high excitation power.

Conference Presentation

Citation Download Citation

Jeongyong Kim "Exciton-plasmon interaction in two-dimensional semiconductors for refined light emission (Conference Presentation)", Proc. SPIE 10722, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVI, 107220Z (17 September 2018); https://doi.org/10.1117/12.2320390

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