Development of absorption-coefficient-measurement method of EUV resist by direct-resist coating on a photodiode

Shota Niihara; Tetsuo Harada; Takeo Watanabe

doi:10.1117/12.2502267

3 October 2018 Development of absorption-coefficient-measurement method of EUV resist by direct-resist coating on a photodiode

Shota Niihara, Tetsuo Harada, Takeo Watanabe

Author Affiliations +

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 108091Y (2018) https://doi.org/10.1117/12.2502267
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

The resist thickness of EUV lithography is thin less than 50 nm. Since the most photon is not absorbed by the resist, the EUV chemical reaction is not occurred sufficiently. In order to increase chemical reaction, a resist should have a highabsorption material compounds for the EUV photons. Many high-absorbing material has been studied such as hafnium, zinc, tin oxide, and tellurium. Resist performance improvements are expected in sensitivity and reduction of line-edgeroughness. For the development of the high-absorbing resist materials, it is significant to measure the EUV absorption coefficient accurately. For measurement of absorption, it is necessary to measure both transmittance and thickness of resist accurately. We have developed an absorption-coefficient-measurement method of the EUV resist at BL-10 beamline of NewSUBARU synchrotron light facility. The resist is coated on a detector photodiode directly, and EUV transmittance and thickness are measured. We measured an absorption coefficient of PMMA resist, which has very simple chemical composition and ZEP520A resist which is copolymer. The transmittance uniformity on the photodiode was less than 0.6%. This result indicates that the resist sample was coated with good uniformity on the surface of the photodiode. The result of PMMA well corresponded to the calculated value. Thus, it is practicable to measure the absorption coefficient accurately.

Citation Download Citation

Shota Niihara, Tetsuo Harada, and Takeo Watanabe "Development of absorption-coefficient-measurement method of EUV resist by direct-resist coating on a photodiode", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108091Y (3 October 2018); https://doi.org/10.1117/12.2502267

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photodiodes

Extreme ultraviolet

Transmittance

Absorption

Coating

Polymethylmethacrylate

Deep ultraviolet

Show All Keywords

Keywords/Phrases

Search In:

Publication Years