Paper
14 November 2018 Mid-/long-wave dual-band infrared focal plane array based on type-II InAs/GaSb superlattice
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Abstract
In this paper, a mid-/long-wave dual-band detector with N-M-π-B-π-N sturcture was developed based on type-II InAs/GaSb superlattice was fabricated by adopting the dual-band structure. The dual-band detector epi-layer presented high crystalline quality of epi-layers. The two channels, with respective 50% cut-off wavelength at 3.5 μm and 11.8 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band were 22% at 2.7 μm under no bias voltage and 23% at 9.1 μm under -180 mV, respectively. The resistance under 0 and -180 mV of applied bias were 1.7×104 Ω·cm2 and 97 Ω·cm2. Due to the high resistance of long wavelength infrared channel, the specific detectivity of LWIR band maintains above 1011 cm·Hz1/2/W from 4.5 μm to 12.6 μm under - 180 mV at 77K. Finally, the thermal images of both channel were taken by the fabricated FPA.
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Zhi Jiang, Yao-Yao Sun, Chun-Yan Guo, Hong-Yue Hao, Dong-Wei Jiang, Guo-Wei Wang, Ying-Qiang Xu, and Zhi-Chuan Niu "Mid-/long-wave dual-band infrared focal plane array based on type-II InAs/GaSb superlattice", Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 108261X (14 November 2018); https://doi.org/10.1117/12.2506053
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KEYWORDS
Mid-IR

Long wavelength infrared

Superlattices

Sensors

Staring arrays

Quantum efficiency

Infrared radiation

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