Dry Lithography with Deep-UV Exposure Using Silylated Resist Materials

Chris Spence; Yosi Shacham-Diamand

doi:10.1117/12.953032

30 January 1989 Dry Lithography with Deep-UV Exposure Using Silylated Resist Materials

Chris Spence, Yosi Shacham-Diamand

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953032
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

The silylation behavior of some positive resists has been investigated using 248nm KrF Excimer laser expo-sure. In particular we have studied novolac-based mid-UV (i-line) positive resists and also variants which use an image reversal scheme. Both types of resist were found to produce selectivities in etch rate of 10-15. The etch rate was slower in the exposed regions in the positive case, and slower in the flood-exposed areas in the image reversal schemes. We have compared our results to the mechanisms for silylation selectivity suggested in the literature and find them to be consistent with models that propose cross-linking as a diffusion inhibitor. The nature of the cross-linking however is not the same in all cases, and depends on the chemistry and processing parameters of the resist system.

Citation Download Citation

Chris Spence and Yosi Shacham-Diamand "Dry Lithography with Deep-UV Exposure Using Silylated Resist Materials", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953032

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