Contact Window Metrology Using The Photocleave Technique

T. Yang; D. E. Schrope; B. J. Dardzinski; J. D. Cuthbert

doi:10.1117/12.953080

19 July 1989 Contact Window Metrology Using The Photocleave Technique

T. Yang, D. E. Schrope, B. J. Dardzinski, J. D. Cuthbert

Proceedings Volume 1087, Integrated Circuit Metrology, Inspection, and Process Control III; (1989) https://doi.org/10.1117/12.953080
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Application of the nondestructive Photocleave Technique for determining the shape and size of sub-micron contact windows defined in photoresist is described. Stepper-based printing in positive photoresist is assumed. Following conventional exposure of the contact windows in pass 1, the stepper is programmed to immediately execute pass 2, with an appropriate pass-shift, to expose a linear feature that sections the latent images of the contact windows. After development, a fast turn around SEM is used to determine the contact window parameters with an enhanced level of certainty as a result of using the Photocleave Technique.

Citation Download Citation

T. Yang, D. E. Schrope, B. J. Dardzinski, and J. D. Cuthbert "Contact Window Metrology Using The Photocleave Technique", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953080

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