Three-dimensional steady-state thermal model of a high power diode laser

Di-Hai Wu; Chung-En Zah; Xingsheng Liu

doi:10.1117/12.2506494

4 March 2019 Three-dimensional steady-state thermal model of a high power diode laser

Di-Hai Wu, Chung-En Zah, Xingsheng Liu

Proceedings Volume 10899, Components and Packaging for Laser Systems V; 1089904 (2019) https://doi.org/10.1117/12.2506494
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

Heat conduction is of great importance in thermal design for high power diode lasers. In this paper, an analytical, threedimensional, steady-state, multilayered, thermal model for a high power diode laser is derived. The temperature and heat flux distribution are discussed for an epi-down bonded broad-area diode laser, and it is found that heat spreading within laser chip contributes 6.8% to total heat dissipation. Further discussion is carried out on heat flow in the submount to show the submount size requirement for which this model can be used. Simulation result based on finite element method (FEM) is employed to confirm the calculation accuracy from this analytical model.

Conference Presentation

Citation Download Citation

Di-Hai Wu, Chung-En Zah, and Xingsheng Liu "Three-dimensional steady-state thermal model of a high power diode laser", Proc. SPIE 10899, Components and Packaging for Laser Systems V, 1089904 (4 March 2019); https://doi.org/10.1117/12.2506494

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