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18 March 2019 Wide-temperature-range characterization of 1.55-μm phosphorus-free multiple-quantum-well lasers grown by MBE on InP
Sami Adnan Nazib, Troy Hutchins-Delgado, Diana Magana Contreras, Hosuk Lee, Estania Jean Charles, Nathan J. Withers, Sadhvikas J. Addamane, Emma J. Renteria, John Nogan, Ganesh Balakrishnan, Marek Osiński
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Proceedings Volume 10912, Physics and Simulation of Optoelectronic Devices XXVII; 109120X (2019) https://doi.org/10.1117/12.2515648
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Phosphorus-free multiple-quantum-well lasers with In0.53Ga0.47As wells, In0.53Al0.2Ga0.27As barriers, and In0.53Al0.47As claddings have been fabricated as Fabry-Perot devices of different lengths and widths. Their current-voltage and light-current characteristics have been measured over a wide temperature range from 200 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.
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Sami Adnan Nazib, Troy Hutchins-Delgado, Diana Magana Contreras, Hosuk Lee, Estania Jean Charles, Nathan J. Withers, Sadhvikas J. Addamane, Emma J. Renteria, John Nogan, Ganesh Balakrishnan, and Marek Osiński "Wide-temperature-range characterization of 1.55-μm phosphorus-free multiple-quantum-well lasers grown by MBE on InP", Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120X (18 March 2019); https://doi.org/10.1117/12.2515648
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KEYWORDS
Cryogenics
Semiconductor lasers
Temperature metrology
Resistance
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