Arsenic selenide dielectric metasurfaces

Jesse A. Frantz; Jason D. Myers; Robel Y. Bekele; Anthony Clabeau; Vinh Nguyen; Collin C. McClain; Natalia Litchinitser; Jasbinder S. Sanghera

doi:10.1117/12.2507894

27 February 2019 Arsenic selenide dielectric metasurfaces

Jesse A. Frantz, Jason D. Myers, Robel Y. Bekele, Anthony Clabeau, Vinh Nguyen, Collin C. McClain, Natalia Litchinitser, Jasbinder S. Sanghera

Author Affiliations +

Proceedings Volume 10914, Optical Components and Materials XVI; 109140A (2019) https://doi.org/10.1117/12.2507894
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Arsenic triselenide (As₂Se₃) is of interest for use in dielectric metasurfaces for several reasons: It has a high linear refractive index, n=2.8, enabling high index contrast with its surrounding medium; it has an exceptionally high optical nonlinearity (n₂ < 900 × that of silica) making it a good candidate for nonlinear metasurfaces; and its band gap of 1.8 eV and wide transmission window, spanning from approximately 1.5-14 μm, make it useful for applications in the shortwave infrared into the long-wave infrared. We discuss recent results in which we showed that unpassivated As₂Se₃ films degrade significantly under ambient conditions in the presence of light. We discuss the mechanism of this degradation and show that deposition of a thin (~10 nm) Al₂O₃ passivation layer, deposited via atomic layer deposition, together with preventing exposure to below-band gap light inhibits degradation. Finally, we fabricate initial As₂Se₃-based dielectric metasurfaces by writing features via a laser direct write system. For mid-wave to long-wave infrared applications, features with relevant sizes can be written using this technique. We measure resonances for these structures and compare to theoretical results.

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Jesse A. Frantz, Jason D. Myers, Robel Y. Bekele, Anthony Clabeau, Vinh Nguyen, Collin C. McClain, Natalia Litchinitser, and Jasbinder S. Sanghera "Arsenic selenide dielectric metasurfaces", Proc. SPIE 10914, Optical Components and Materials XVI, 109140A (27 February 2019); https://doi.org/10.1117/12.2507894

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KEYWORDS

Selenium

Arsenic

Transmittance

Dielectrics

Silicon

Glasses

Long wavelength infrared

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