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13 March 2019 Sapphire nanomembrane technology for high-efficiency micro-LED displays (Conference Presentation)
Euijoon Yoon
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Proceedings Volume 10918, Gallium Nitride Materials and Devices XIV; 1091803 (2019) https://doi.org/10.1117/12.2511100
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Kinetics of solid-phase epitaxy of amorphous alumina deposited by atomic layer deposition will be reported. Also, discrete micro-LED fabrication and mechanical lift-off the micro-LED arrays will be reported in this presentation. [1] D. Moon et al., “An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN,” J. Crystal Growth 441, 52-57 (2016). [2] J. Jeong et al., “Solid-phase epitaxy of a cavity-shaped amorphous alumina nanomembrane structure on a sapphire substrate,” J. Crystal Growth, 498, 130-136 (2018).
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Euijoon Yoon "Sapphire nanomembrane technology for high-efficiency micro-LED displays (Conference Presentation)", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091803 (13 March 2019); https://doi.org/10.1117/12.2511100
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KEYWORDS
Sapphire
Nanotechnology
Crystals
Epitaxy
Atomic layer deposition
Gallium nitride
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