Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy

Filip Tuomisto; Antti Karjalainen; Vera Prozheeva; Ilja Makkonen; Gunter Wagner; Michele Baldini

doi:10.1117/12.2518888

1 March 2019 Ga vacancies and electrical compensation in β-Ga₂O₃ thin films studied with positron annihilation spectroscopy

Filip Tuomisto, Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Gunter Wagner, Michele Baldini

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Proceedings Volume 10919, Oxide-based Materials and Devices X; 1091910 (2019) https://doi.org/10.1117/12.2518888
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga₂O₃ homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga₂O₃.

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Citation Download Citation

Filip Tuomisto, Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Gunter Wagner, and Michele Baldini "Ga vacancies and electrical compensation in β-Ga₂O₃ thin films studied with positron annihilation spectroscopy", Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091910 (1 March 2019); https://doi.org/10.1117/12.2518888

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