Second order nonlinearities in silicon waveguides: from the physics to new applications (Conference Presentation)

Chiara Vecchi; Claudio Castellan; Pierre Guilleme; Alessandro Trenti; Martino Bernard; Maria Parisi; Mher Ghulinyan; Georg Pucker; Maurizio de Rosa; Lorenzo Pavesi

doi:10.1117/12.2506030

4 March 2019 Second order nonlinearities in silicon waveguides: from the physics to new applications (Conference Presentation)

Chiara Vecchi, Claudio Castellan, Pierre Guilleme, Alessandro Trenti, Martino Bernard, Maria Parisi, Mher Ghulinyan, Georg Pucker, Maurizio de Rosa, Lorenzo Pavesi

Author Affiliations +

Proceedings Volume 10921, Integrated Optics: Devices, Materials, and Technologies XXIII; 1092109 (2019) https://doi.org/10.1117/12.2506030
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Second order nonlinearities are inhibited in centrosymmetric crystals, like silicon. However, in the last ten years many attempts have been carried out to induce second order nonlinear susceptibility applying a stressing layer of silicon nitride on the top of a silicon waveguide. Succesful experiments showed both Second Harmonic Generation (SHG) or electro-optic modulation in strained silicon waveguide. In order to develop new devices, a full comprehension of the origins of such a nonlinearity is needed. In fact, a lot of estimations of the second order nonlinear coefficient have been given, all different from each other and, in some cases, even contradictory. In this work, we perform SHG in multimodal phase-matched silicon waveguides. We propose a way to individuate the origin of the nonlinearity, discriminating among the break of the centrosymmetry, the presence of charged states at the interfaces between silicon and silicon nitride and the overlap of the optical mode with the silicon nitride. We estimated a value of the second order nonlinear coefficient of 0.5 pm/V, demonstrating that it results from the coupling of the silicon third order nonlinear coefficient with the electric field induced by the presence of the trapped charges at the core/cladding interface. We also show preliminary results on SHG in strained silicon microring resonators. Our results open the door to interesting applications, going from broad frequency conversion, to generation of quantum states of light, up to the generation of octave spanning frequency comb based on second order nonlinearities.

Conference Presentation

Citation Download Citation

Chiara Vecchi, Claudio Castellan, Pierre Guilleme, Alessandro Trenti, Martino Bernard, Maria Parisi, Mher Ghulinyan, Georg Pucker, Maurizio de Rosa, and Lorenzo Pavesi "Second order nonlinearities in silicon waveguides: from the physics to new applications (Conference Presentation)", Proc. SPIE 10921, Integrated Optics: Devices, Materials, and Technologies XXIII, 1092109 (4 March 2019); https://doi.org/10.1117/12.2506030

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Silicon

Waveguides

Physics

Second-harmonic generation

Interfaces

Crystals

Electro optics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years