Experimental investigation of a high-k reticle absorber system for EUV lithography

Jo Finders; Robbert de Kruif; Frank Timmermans; Jara García Santaclara; Brid Connely; Markus Bender; Frank Schurack; Takahiro Onoue; Yohei Ikebe; Dave Farrar

doi:10.1117/12.2515496

1 May 2019 Experimental Investigation of a high-κ reticle absorber system for EUV lithography

Jo Finders, Robbert de Kruif, Frank Timmermans, Jara García Santaclara, Brid Connely, Markus Bender, Frank Schurack, Takahiro Onoue, Yohei Ikebe, Dave Farrar

Author Affiliations +

Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 1095714 (2019) https://doi.org/10.1117/12.2515496
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

EUV lithography is entering High Volume Manufacturing at relative high Rayleigh factor k₁ above 0.4. In comparison immersion lithography has been pushed to k₁values of 0.3 or below over the last two decades. One of the strong contributors determining the effective usable resolution is the mask absorber stack. The mask stack alters the diffraction by modifying the phase and intensity of the diffracted orders. In this paper we show the exposure results of a test mask having higher absorbance of EUV light and the advantages of reduced Mask 3D effects to imaging.

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Citation Download Citation

Jo Finders, Robbert de Kruif, Frank Timmermans, Jara García Santaclara, Brid Connely, Markus Bender, Frank Schurack, Takahiro Onoue, Yohei Ikebe, and Dave Farrar "Experimental Investigation of a high-κ reticle absorber system for EUV lithography", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095714 (1 May 2019); https://doi.org/10.1117/12.2515496

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