Paper
26 March 2019 Alignment sampling by thorough run-to-run simulation
Alex Ren, Ding Kai, Boris Habets, Steffen Guhlemann, Norman Birnstein, Alexander Mühle, Patrick Lomtscher, Rex Liu
Author Affiliations +
Abstract
There are different approaches for alignment sampling optimization. In order to determine, which approach is optimal, OPAL run-to-run simulations1 must be executed using the result of the different sampling optimization. This means that there is a two-step approach: first, an iterative sampling optimization algorithm that results in optimal overlay modeling. Then, a run-to-run simulation is done to verify the impact on the overlay performance.

In this study, we investigate on the behavior of four different approaches to alignment sampling optimization on four different layers and analyze which approach is most suitable for which layer.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alex Ren, Ding Kai, Boris Habets, Steffen Guhlemann, Norman Birnstein, Alexander Mühle, Patrick Lomtscher, and Rex Liu "Alignment sampling by thorough run-to-run simulation", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109592O (26 March 2019); https://doi.org/10.1117/12.2515001
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KEYWORDS
Optical alignment

Overlay metrology

Semiconducting wafers

Optimization (mathematics)

Computer simulations

Data modeling

Semiconductors

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