Paper
15 November 2018 Growth, structure and optical properties of ZnSe:Co thin films
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Proceedings Volume 10964, Tenth International Conference on Information Optics and Photonics; 109643F (2018) https://doi.org/10.1117/12.2505945
Event: Tenth International Conference on Information Optics and Photonics (CIOP 2018), 2018, Beijing, China
Abstract
ZnSe:Co thin films were grown on quartz substrates at various ambient pressure by pulsed laser deposition. The propagation of plasma plume, the structure and optical propert ies of films at pressure of 1Pa to 10Pa had been investigated. With the ambient pressure increased, the angle of divergence and propagation distance of plasma plume changed, the crystal structure of films investigated by XRD showed that the crystal quality of films was promoted. The optical band gap and refractive index were analyzed by the transmission spectra. The optical band gap first decrease then increase with increasing deposition pressure, which may be associated with the quantum confinement effect. The refract ive index increased with increasing deposition pressure, which may be due to the promotion of the film density. The dispersion parameters, E0, Ed, the static refract ive index (n0) and static dielectric constant (ε0) were calculated according to the single oscillator model.
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Shufeng Li, Li Wang, Xueqiong Su, Yong Pan, Dongwen Gao, and Xiaowei Han "Growth, structure and optical properties of ZnSe:Co thin films", Proc. SPIE 10964, Tenth International Conference on Information Optics and Photonics, 109643F (15 November 2018); https://doi.org/10.1117/12.2505945
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KEYWORDS
Thin films

Crystals

Refractive index

Plasma

Optical properties

Quartz

Oscillators

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