Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Lis K. Nanver; M. Krakers; T. Knezević; A. Karavidas; I. Boturchuk; V. Agarwal; R. J. E. Hueting; S. Dutta; A. J. Annema

doi:10.1117/12.2501598

24 January 2019 Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Lis K. Nanver, M. Krakers, T. Knezević, A. Karavidas, I. Boturchuk, V. Agarwal, R. J. E. Hueting, S. Dutta, A. J. Annema

Author Affiliations +

Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems; 1104306 (2019) https://doi.org/10.1117/12.2501598
Event: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 2018, Skukuza, South Africa

Abstract

The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

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Lis K. Nanver, M. Krakers, T. Knezević, A. Karavidas, I. Boturchuk, V. Agarwal, R. J. E. Hueting, S. Dutta, and A. J. Annema "Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices", Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104306 (24 January 2019); https://doi.org/10.1117/12.2501598

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