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24 January 2019 Self-aligned organic thin-film transistors for flexible electronics
Thorsten Meyers, Julia Reker, Julian Temme, Fábio F. Vidor, Ulrich Hilleringmann
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Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems; 1104313 (2019) https://doi.org/10.1117/12.2500673
Event: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 2018, Skukuza, South Africa
Abstract
The digitalization is one of the main driving force for technologic developments in the area of low-cost electronics. Sensors and RFID tags should be integrated possibly at low-cost to easily upgrade everyday objects with new functionalities. Key elements of such upgrading objects are often thin-film transistors (TFTs). In this article we analysed two different commercially available, high-k nanocomposites ino®flex Z3 and ino®flex T3 regarding their frequencydependent dielectric constant and surface properties. TFTs using either ino®flex Z3 or ino®flex T3 as gate dielectric were fabricated using common photolithographic integration methods and subsequently electrically analysed. For further device optimization a self-aligning integration technique was used utilising the nanocomposite ino®flex T3 as gate dielectric. For all integrated TFTs, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) was used as active semiconductor.
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Thorsten Meyers, Julia Reker, Julian Temme, Fábio F. Vidor, and Ulrich Hilleringmann "Self-aligned organic thin-film transistors for flexible electronics", Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104313 (24 January 2019); https://doi.org/10.1117/12.2500673
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KEYWORDS
Dielectrics
Nanocomposites
Semiconductors
Transistors
Thin films
Flexible circuits
Organic electronics
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