Electroluminescence enhancement in GaInP/GaAs/Ge tandem solar cells induced by laser

Peng-cheng Dou; Guo-bin Feng; Jian-min Zhang; Zhen Zhang; Yun-peng Li; Yu-bin Shi

doi:10.1117/12.2523999

29 March 2019 Electroluminescence enhancement in GaInP/GaAs/Ge tandem solar cells induced by laser

Peng-cheng Dou, Guo-bin Feng, Jian-min Zhang, Zhen Zhang, Yun-peng Li, Yu-bin Shi

Proceedings Volume 11046, Fifth International Symposium on Laser Interaction with Matter; 1104619 (2019) https://doi.org/10.1117/12.2523999
Event: Fifth International Symposium on Laser Interaction with Matter, 2018, Changsha, China

Abstract

In order to study the mechanisms of thermal damage during laser machining in GaInP/GaAs/Ge tandem solar cells (TSCs), the spatial electroluminescence (EL) characterization on sub-cells pre and post laser irradiation was carried out. Results showed that post laser irradiation, the EL of GaAs middle cell increased to saturation in the damage zone, but decreased to zero at the rest part. A theory was put up to explain this phenomenon by using two-unit equivalent circuit model, and then verified through GaInP top cell spatial EL analysis. Conclusion was drawn that current redistribution induced by local shunt resistance decreasing in GaInP top cell was the main cause for the EL enhancement in GaAs middle cell.

Citation Download Citation

Peng-cheng Dou, Guo-bin Feng, Jian-min Zhang, Zhen Zhang, Yun-peng Li, and Yu-bin Shi "Electroluminescence enhancement in GaInP/GaAs/Ge tandem solar cells induced by laser", Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 1104619 (29 March 2019); https://doi.org/10.1117/12.2523999

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