The MBE Growth And Electronic Structure Of a-SnxGe1-x Alloys

Hartmut Hochst; Michael A. Engelhardt; David W. Niles

doi:10.1117/12.960639

12 September 1989 The MBE Growth And Electronic Structure Of α-Sn_xGe_1-x Alloys

Hartmut Hochst, Michael A. Engelhardt, David W. Niles

Proceedings Volume 1106, Future Infrared Detector Materials; (1989) https://doi.org/10.1117/12.960639
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

The MBE growth and electronic structure of a-SnxGe i_x alloy films were studied with RHEED and angle resolved synchrotron radiation photoemission spectroscopy. Doe to an increased interfacial reactivity, CdTe substrates are not suitable for the epitaxial growth of homogeneous films with x>0.1. Alloy films with good crystalline quality can be grown on Ge(100) substrates at approx 400 C. The expected closing of the alloy band gap is confirmed by photoemission data which show the shift of the T8 valence band maximum from -0.6 eV in Ge(100) to -0.16 eV below EF in a-Sn0.48 Ge0.52

Citation Download Citation

Hartmut Hochst, Michael A. Engelhardt, and David W. Niles "The MBE Growth And Electronic Structure Of α-Sn_xGe_1-x Alloys", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960639

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