Paper
8 July 2019 Optical and electrical characteristics of radio frequency sputtered ITO and In-free transparent conductors
Author Affiliations +
Proceedings Volume 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019); 1106406 (2019) https://doi.org/10.1117/12.2535715
Event: Pacific Rim Laser Damage 2019 and Thin Film Physics and Applications 2019, 2019, Qingdao, China
Abstract
In this work the optical and electrical characteristics of radio frequency sputtered indium tin oxide (ITO), aluminum doped zinc oxide (AZO) and nickel oxide (NiOx) are reported. ITO and AZO films showed very high visible transmittance values, with maxima up to 90-91%, and sheet resistance of 35 and 33 Ω/□, respectively, while non stoichiometric NiO films showed visible transmittance up to 53% and sheet resistance of several tens of KΩ/□. Properties of the films were correlated to their structure and morphology which are strongly dependent on the growth parameters.
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Maria Luisa Grilli "Optical and electrical characteristics of radio frequency sputtered ITO and In-free transparent conductors", Proc. SPIE 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), 1106406 (8 July 2019); https://doi.org/10.1117/12.2535715
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KEYWORDS
Transmittance

Oxygen

Radio optics

Resistance

Oxides

Transparent conductors

Aluminum

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