The Origin Of Instability In Metal/SiO[sub]2[/sub]/InSb Capacitor Fabricated By Photo-Enhanced Chemical Vapor Deposition

Tai-Ping Sun; Si-Chen Lee; Sheng-Jenn Yang

doi:10.1117/12.960662

11 October 1989 The Origin Of Instability In Metal/SiO₂/InSb Capacitor Fabricated By Photo-Enhanced Chemical Vapor Deposition

Tai-Ping Sun, Si-Chen Lee, Sheng-Jenn Yang

Author Affiliations +

Proceedings Volume 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors; (1989) https://doi.org/10.1117/12.960662
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

The AuCriSiO2/InSb Metal-Oxide-Semiconductor capacitor was fabricated using photo-enhanced chemical vapor deposition. The electrical and structural properties were analyzed by capacitance-voltage and Auger electron spectroscopy , respectively. The high frequency (1 MHz) capacitance-voltage measurements were usually performed after positive or negative bias-temperature stressing. Both the flat-band voltage shift and the change of hysteresis of capacitance-voltage curve indicate the existence of enormous negative mobile charges in the bulk SiO2. Auger depth profile reveals that these negative mobile charges are metallic indium and antimony ions.

Citation Download Citation

Tai-Ping Sun, Si-Chen Lee, and Sheng-Jenn Yang "The Origin Of Instability In Metal/SiO₂/InSb Capacitor Fabricated By Photo-Enhanced Chemical Vapor Deposition", Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); https://doi.org/10.1117/12.960662

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