Resonant cavity enhanced photodetectors for the mid-wave infrared

A. P. Craig; T. Golding; G. R. Savich; G. W. Wicks; A. R. Marshall

doi:10.1117/12.2536900

16 October 2019 Resonant cavity enhanced photodetectors for the mid-wave infrared

A. P. Craig, T. Golding, G. R. Savich, G. W. Wicks, A. R. Marshall

Proceedings Volume 11163, Emerging Imaging and Sensing Technologies for Security and Defence IV; 1116309 (2019) https://doi.org/10.1117/12.2536900
Event: SPIE Security + Defence, 2019, Strasbourg, France

Abstract

We present III-Sb resonant cavity-enhanced (RCE) photodetectors suitable for gas detection in the mid-wave infrared. AlAsSb/GaSb DBRs and absorbers of bulk InAsSb or a type-II InAsSb-InAs SLS were grown on GaSb, allowing for operation at 3.72 μm or 4.52 μm, with linewidth Δλ < 50 nm and Δλ < 70 nm, respectively. A barrier diode structure was used, and the absorber thickness was limited to 96 nm for InAsSb – or 192 nm for the SLS – in order to limit the dark currents. High quantum efficiency was obtained through the resonant optical field, while the remainder of the cavity was grown using wide-gap AlAsSb spacer layers not contributing to the dark current. By carefully compensation doping the AlAsSb layers, the 3.72 μm device was bandgap-engineered for a flat Fermi level in the thin absorber, and hence dark currents which scale with the absorber thickness. This can equate to a >20x reduction in noise compared with a conventional nBn detector with full thickness absorber. At 3.72 μm, performance above the BLIP limit imposed on broadband photodetectors was found by calculating for the specific detectivity.

Citation Download Citation

A. P. Craig, T. Golding, G. R. Savich, G. W. Wicks, and A. R. Marshall "Resonant cavity enhanced photodetectors for the mid-wave infrared", Proc. SPIE 11163, Emerging Imaging and Sensing Technologies for Security and Defence IV, 1116309 (16 October 2019); https://doi.org/10.1117/12.2536900

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