Resistive switching memory devices based on PbS quantum dots

Zhiliang Chen; Yating Zhang; Yu Yu; Lufan Jin; Yifan Li; Jianquan Yao

doi:10.1117/12.2538555

19 November 2019 Resistive switching memory devices based on PbS quantum dots

Zhiliang Chen, Yating Zhang, Yu Yu, Lufan Jin, Yifan Li, Jianquan Yao

Proceedings Volume 11184, Optoelectronic Devices and Integration VIII; 1118416 (2019) https://doi.org/10.1117/12.2538555
Event: SPIE/COS Photonics Asia, 2019, Hangzhou, China

Abstract

Quantum dots have widely used in a lot of micro-nano photoelectric devices. In this work, PbS quantum dots have been synthesized successfully then a RRAM based on those quantum dots and PMMA mixture material was prepared by solution processed method at room temperature. We have demonstrated that the memory device shows typical resistance switching characteristic and high resistance ratio ( >10⁴). To study the quantum dots based RRAM provides an opportunity to develop the next generation high-performance memory devices and open up a new application field of QDs materials in the future.

Citation Download Citation

Zhiliang Chen, Yating Zhang, Yu Yu, Lufan Jin, Yifan Li, and Jianquan Yao "Resistive switching memory devices based on PbS quantum dots", Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 1118416 (19 November 2019); https://doi.org/10.1117/12.2538555

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