Performance modeling of III-V antimonide-based barrier infrared detectors

M. Kopytko; E. Gomółka; T. Manyk; P. Martyniuk; J. Rutkowski

doi:10.1117/12.2547358

2 March 2020 Performance modeling of III-V antimonide-based barrier infrared detectors

M. Kopytko, E. Gomółka, T. Manyk, P. Martyniuk, J. Rutkowski

Proceedings Volume 11274, Physics and Simulation of Optoelectronic Devices XXVIII; 112742F (2020) https://doi.org/10.1117/12.2547358
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

The paper presents the analysis of the performance of the InAs/InAsSb superlattice barrier detector operated at 230 K and long-wavelengths infrared spectrum (LWIR). To determine the position of the electron miniband and the first heavy hole state in the superlattice, we have used a k·p. Having the position of the conduction band and valence band we have to determine a correct band alignment between the barrier and absorber layer – the barrier in the valence band must be sufficiently low to ensure the flow of optically generated holes. We have considered an AlSb material for barrier best aligned to LWIR InAs/InAsSb superlattice absorber.

Citation Download Citation

M. Kopytko, E. Gomółka, T. Manyk, P. Martyniuk, and J. Rutkowski "Performance modeling of III-V antimonide-based barrier infrared detectors", Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112742F (2 March 2020); https://doi.org/10.1117/12.2547358

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