Transient photoconductivity and photo-excited carrier dynamics in (Bi1-xInx)2Se3 thin films

Teng Shi; Kateryna Kushnir; Zhengtianye Wang; Stephanie Law; Lyubov Titova

doi:10.1117/12.2546692

27 February 2020 Transient photoconductivity and photo-excited carrier dynamics in (Bi_1-xIn_x)₂Se₃ thin films

Teng Shi, Kateryna Kushnir, Zhengtianye Wang, Stephanie Law, Lyubov Titova

Proceedings Volume 11278, Ultrafast Phenomena and Nanophotonics XXIV; 112780H (2020) https://doi.org/10.1117/12.2546692
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

We use time-resolved THz spectroscopy to study microscopic conductivity and photoinduced carrier dynamics in MBE-grown 100 nm thick (Bi_1-xIn_x)2Se₃ thin films with indium concentration varying from x=0 to x=0.5. Both intrinsic and photoinduced conductivity in Bi2Se3 is significantly higher compared to the films with x=0.25 and x=0.50, with carriers that are not constrained by the twin domain boundaries and exhibit high mobility of 1100 cm²/Vs. We find that introducing indium with concentration of x=0.25 and higher, above the threshold for a topological to trivial transition, suppresses both intrinsic and photoinduced conductivity by over an order of magnitude and reduces the lifetime of photoexcited carriers. These findings demonstrate that controlling indium concentration in (Bi_1-xIn_x)₂Se₃ films provides an avenue to design (Bi_{1- x}In_x)₂Se₃ films with desired properties for high-speed optoelectronic devices.

Citation Download Citation

Teng Shi, Kateryna Kushnir, Zhengtianye Wang, Stephanie Law, and Lyubov Titova "Transient photoconductivity and photo-excited carrier dynamics in (Bi_1-xIn_x)₂Se₃ thin films", Proc. SPIE 11278, Ultrafast Phenomena and Nanophotonics XXIV, 112780H (27 February 2020); https://doi.org/10.1117/12.2546692

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