Optical absorption in gallium and indium oxide (Conference Presentation)

Hartwin Peelaers

doi:10.1117/12.2553769

10 March 2020 Optical absorption in gallium and indium oxide (Conference Presentation)

Hartwin Peelaers

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 1128107 (2020) https://doi.org/10.1117/12.2553769
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Ga2O3 is a wide-band-gap oxide, with promising properties suitable for high-power devices and UV photodetectors. The latter requires combining transparency with conductivity, which are properties usually not occurring together. We use first-principles calculations to accurately define the fundamental transparency limits of Ga2O3, by considering both indirect and direct free-carrier absorption. These results also shed light on recent experimental observations. We will also discuss absorption in In2O3, as Sn-doped In2O3 (ITO) is the most widely used transparent conducting oxide, and explain what makes it such a good material. Work performed in collaboration with E. Kioupakis and C.G. Van de Walle.

Conference Presentation

Citation Download Citation

Hartwin Peelaers "Optical absorption in gallium and indium oxide (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128107 (10 March 2020); https://doi.org/10.1117/12.2553769

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