MOCVD epitaxy and doping for beta-Ga2O3 and (AlxGa1-x)2O3 (Conference Presentation)

Hongping Zhao

doi:10.1117/12.2552502

10 March 2020 MOCVD epitaxy and doping for β-Ga₂O₃ and (Al_xGa_1-x)₂O₃ (Conference Presentation)

Hongping Zhao

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810C (2020) https://doi.org/10.1117/12.2552502
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

β-Ga2O3 represents the emerging ultrawide bandgap semiconductor material, having a bandgap of 4.5-4.9 eV and estimated breakdown field of 6-8 MV/cm, promising for power electronic devices and solar blind photodetectors. High quality material growth and fundamental understanding of its ternary alloy (AlxGa1-x)2O3 are still lacking. Metalorganic chemical vapor deposition (MOCVD) growth of β-Ga2O3 and (AlxGa1-x)2O3 are studied with the focus on understanding the effects of growth conditions on the material quality, control of background and n-type doping, as well as transport properties. Record high room temperature and low temperature mobilities have been achieved in MOCVD β-Ga2O3.

Conference Presentation

Citation Download Citation

Hongping Zhao "MOCVD epitaxy and doping for β-Ga₂O₃ and (Al_xGa_1-x)₂O₃ (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810C (10 March 2020); https://doi.org/10.1117/12.2552502

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