10 March 2020Improved ultrafast optical nonlinearity in polycrystalline GaZnO nanostructures by selective electron beam irradiation (Conference Presentation)
Albin Antony,1 Poornesh P,1 Iwan V. Kityk,2 Ganesh Sanjeev,3 Suresh D. Kulkarni4
1Manipal Institute of Technology (India) 2Czestochowa Univ. of Technology (Poland) 3Mangalore Univ. (India) 4Manipal Academy of Higher Education (India)
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Ga doped ZnO(GaZnO) nanostructures for the improved ultrafast nonlinear optical properties by selective electron beam irradiation were studied. The crystalline size of the films shows a decrement due to lattice mismatch effects arised owing to EBI induced stress. The occurrence of the E2H mode in Raman spectra indicates the quality of the grown nanostructures. Gaussian deconvolution fitting on photoluminescence spectra reveals defect related emission originated from intrinsic defects. The core level spectra of O1s from XPS analysis has shown a substantial changes upon EBI in which peak related to oxygen vacancy defect got suppressed The third harmonic generation studies in both femtosecond and nanosecond regime shows substantial enhancement in the signal intensity which outcomes the effect of EBI treatment
Albin Antony,Poornesh P,Iwan V. Kityk,Ganesh Sanjeev, andSuresh D. Kulkarni
"Improved ultrafast optical nonlinearity in polycrystalline GaZnO nanostructures by selective electron beam irradiation (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810X (10 March 2020); https://doi.org/10.1117/12.2545472
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Albin Antony, Poornesh P, Iwan V. Kityk, Ganesh Sanjeev, Suresh D. Kulkarni, "Improved ultrafast optical nonlinearity in polycrystalline GaZnO nanostructures by selective electron beam irradiation (Conference Presentation)," Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810X (10 March 2020); https://doi.org/10.1117/12.2545472