Presentation
10 March 2020 Structure-property relationship in blade-coated amorphous In2O3 thin-film transistors (Conference Presentation)
Ahmad R. Kirmani, Emily F Roe, Lee J. Richter
Author Affiliations +
Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112811F (2020) https://doi.org/10.1117/12.2545326
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Metal oxide thin-film transistors (MOTFTs) are expected to play a vital role in enabling printed transparent, plastic electronics. Compatibility with plastics, however, requires MOTFTs to be scalably processed at low temperatures (T). Herein, we explore blade-coating of indium oxide (In2O3) TFTs via sol-gel and combustion chemistries. We find that the sol-gel process enables amorphous In2O3 TFTs at 200°C with moderate electronic mobility (ca. 1 cm2V-1s-1) which increases to 5 cm2V-1s-1 for 212°C. Combustion synthesis is found to bypass the electronically-active amorphous state leading to an early crystallization onset. Paradoxically, combustion TFTs are found to possess poor charge transport at low-T of 200-250°C. Early nucleation during combustion forms nanocrystalline domains that are deleterious to charge transport. Our results highlight that surprisingly it is not crystallization, rather the absence of it that is required to fabricate high-mobility, low-T bladed In2O3 TFTs.
Conference Presentation
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Ahmad R. Kirmani, Emily F Roe, and Lee J. Richter "Structure-property relationship in blade-coated amorphous In2O3 thin-film transistors (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112811F (10 March 2020); https://doi.org/10.1117/12.2545326
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KEYWORDS
Combustion

Thin films

Transistors

Coating

Chemistry

Crystals

Electronics

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