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9 March 2020 GaAs nano-ridge lasers on silicon (Conference Presentation)
Dries Van Thourhout, Yuting Shi, Marina Baryshnikova, Yannick De Koninck, Marianna Pantouvaki, Joris Van Campenhout, Bernardette Kunert
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Proceedings Volume 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII; 112840D (2020) https://doi.org/10.1117/12.2548320
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
The silicon photonics platform is still missing a native source. Therefore, using a novel epitaxial process based on aspect ratio trapping and nano-ridge engineering we demonstrated an powerfull approach to fabricate GaAs-InGaAs lasers directly on a standard silicon substrate. In depth morphological and optical characterisation confirms the high quality of the material. We demonstrated lasing from DFB-type devices with etched gratings and with metal gratings. In the presentation we will also discuss the possibility for coupling to standard silicon waveguides and for extending the emission to longer wavelengths.
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Dries Van Thourhout, Yuting Shi, Marina Baryshnikova, Yannick De Koninck, Marianna Pantouvaki, Joris Van Campenhout, and Bernardette Kunert "GaAs nano-ridge lasers on silicon (Conference Presentation)", Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 112840D (9 March 2020); https://doi.org/10.1117/12.2548320
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KEYWORDS
Silicon
Semiconductor lasers
Gallium arsenide
Epitaxy
Metals
Silicon photonics
Waveguides
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