New directions for microwave and THz detectors based on spintronic diodes (Conference Presentation)

Giovanni Finocchio

doi:10.1117/12.2541441

10 March 2020 New directions for microwave and THz detectors based on spintronic diodes (Conference Presentation)

Giovanni Finocchio

Proceedings Volume 11288, Quantum Sensing and Nano Electronics and Photonics XVII; 112880X (2020) https://doi.org/10.1117/12.2541441
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to their charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. In the first part of the talk, I will discuss our recent results in the field of microwave detectors based on spin diodes.1 Those devices realized with magnetic tunnel junctions exhibit high-detection sensitivity >200kV/W at room temperature, without any external bias fields, and for low-input power (micro-Watts or lower).2 This sensitivity, achieved taking advantage of the injection locking, is significantly larger than both biased state-of-the-art-Schottky diode detectors and other existing spintronic diodes.

Conference Presentation

Citation Download Citation

Giovanni Finocchio "New directions for microwave and THz detectors based on spintronic diodes (Conference Presentation)", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 112880X (10 March 2020); https://doi.org/10.1117/12.2541441

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