High speed short wavelength infrared heterojunction phototransistors based on type II superlattices

Jiakai Li; Arash Dehzangi; Donghai Wu; Manijeh Razeghi

doi:10.1117/12.2548611

31 January 2020 High speed short wavelength infrared heterojunction phototransistors based on type II superlattices

Jiakai Li, Arash Dehzangi, Donghai Wu, Manijeh Razeghi

Proceedings Volume 11288, Quantum Sensing and Nano Electronics and Photonics XVII; 1128813 (2020) https://doi.org/10.1117/12.2548611
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ~2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×10¹¹ cm·Hz^1/2/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80μm diameter circular diode size under 20 V applied reverse bias, a -3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection.

Conference Presentation

Citation Download Citation

Jiakai Li, Arash Dehzangi, Donghai Wu, and Manijeh Razeghi "High speed short wavelength infrared heterojunction phototransistors based on type II superlattices", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128813 (31 January 2020); https://doi.org/10.1117/12.2548611

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