Integrated laser-modulator with a universal InGaAs/InAs tunnel coupled quantum well on quantum-dot-medium

V. Tokranov; M. Yakimov; S. Pradhan; A. Parfenov; S. Oktyabrsky

doi:10.1117/12.2545218

24 February 2020 Integrated laser-modulator with a universal InGaAs/InAs tunnel coupled quantum well on quantum-dot-medium

V. Tokranov, M. Yakimov, S. Pradhan, A. Parfenov, S. Oktyabrsky

Author Affiliations +

Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010B (2020) https://doi.org/10.1117/12.2545218
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Monolithic integration of a laser diode with a modulator usually requires complicated and potentially defect-generating processing steps such as epitaxial regrowth or bonding. Alternatively, the same medium grown in a single epitaxial run can be used in both gain and electro-absorption section. We demonstrate a universal active medium with tunnel coupled InGaAs short period superlattice (SPSL) quantum well grown on InAs quantum dots (QW-on-QDs) in an AlGaAs waveguide. In this configuration, the QW serves as a tunnel injector of electrons into the QDs in the forward-biased gain section, while in the reverse-biased modulator section the InGaAs QW acts as a wavelength matched quantum Stark effect electro-absorber. The optimum QW and QD ground state separation is close to 30meV for efficient tunnel injection into QDs to increase the gain. The 3x(QW-on-QDs) double heterostructure with separate 0.3μm waveguide was grown by molecular beam epitaxy on n-type GaAs substrate. The device was processed into two-section dies with an intermediate distributed Bragg reflector (DBR) between the sections. Focused ion beam air-gap DBR fabrication with low electrical leakage and required (~30%) optical mode reflection was employed. The laser-modulator performance with slope efficiency over 50%, 6dB power modulation, linear dynamic range>24dB at 2GHz was shown with a 200μm long modulator section and low optical feedback from the modulator to laser.

Conference Presentation

Citation Download Citation

V. Tokranov, M. Yakimov, S. Pradhan, A. Parfenov, and S. Oktyabrsky "Integrated laser-modulator with a universal InGaAs/InAs tunnel coupled quantum well on quantum-dot-medium", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010B (24 February 2020); https://doi.org/10.1117/12.2545218

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