Advances in regrown all-semiconductor photonic crystal surface-emitting lasers (Conference Presentation)

Adam F. McKenzie; Ben C. King; Zijun Bian; Jonathan R. Orchard; Neil D. Gerrard; Richard J. E. Taylor; David T. D. Childs; Donald A. MacLaren; Richard A. Hogg

doi:10.1117/12.2545791

9 March 2020 Advances in regrown all-semiconductor photonic crystal surface-emitting lasers (Conference Presentation)

Adam F. McKenzie, Ben C. King, Zijun Bian, Jonathan R. Orchard, Neil D. Gerrard, Richard J. E. Taylor, David T. D. Childs, Donald A. MacLaren, Richard A. Hogg

Author Affiliations +

Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010Y (2020) https://doi.org/10.1117/12.2545791
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

We outline advances in the design, manufacture, and characterisation of a range of all-semiconductor photonic crystal surface emitting lasers (PCSELs). We initially discuss AlAs/GaAs based PC devices that enjoy improved index contrast compared to our previous GaInP/GaAs devices. We will also discuss all-semiconductor InGaAsP/InP based PC PCSELs operating at 1550 nm. For these high aspect ratio structures, the infill of the PC is a significant epitaxial challenge, and optimisation of MOVPE growth conditions such as growth temperature, rate of temperature increase, and V:III ratio, is demonstrated through TEM structural analysis. We will also discuss the optoelectronic properties of our devices.

Conference Presentation

Citation Download Citation

Adam F. McKenzie, Ben C. King, Zijun Bian, Jonathan R. Orchard, Neil D. Gerrard, Richard J. E. Taylor, David T. D. Childs, Donald A. MacLaren, and Richard A. Hogg "Advances in regrown all-semiconductor photonic crystal surface-emitting lasers (Conference Presentation)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010Y (9 March 2020); https://doi.org/10.1117/12.2545791

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