Paper
25 February 2020 Characterization of micro-pixelated InGaP/AlGaInP quantum well structures
Younes Boussadi, Névine Rochat, Jean-Paul Barnes, Badhise Ben Bakir, Philippe Ferrandis, Bruno Masenelli, Christophe Licitra
Author Affiliations +
Abstract
In this paper, we present a structural and optical study on micro-pixelated InGaP/AlGaInP quantum well structures with different pixel sizes down to 6 μm and a red emission at 636 nm. Temperature-dependent photoluminescence and cathodoluminescence cartographies were coupled to observe the emission homogeneity at the pixel scale and to study the impact of non-radiative recombination from sidewall defects. We deduced that micro-LEDs are impacted by surface recombination and we estimated the thermal quenching of photoluminescence related to defects. At low temperatures, a stronger luminescence was also observed from the pixel edges due to the diffusion coefficient or a geometric effect. Finally, the study was completed by a TOF-SIMS analysis in order to provide information about material composition homogeneity.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Younes Boussadi, Névine Rochat, Jean-Paul Barnes, Badhise Ben Bakir, Philippe Ferrandis, Bruno Masenelli, and Christophe Licitra "Characterization of micro-pixelated InGaP/AlGaInP quantum well structures", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 1130221 (25 February 2020); https://doi.org/10.1117/12.2544350
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Luminescence

Quantum wells

Oxides

Epitaxy

Oxidation

Aluminium gallium indium phosphide

Back to Top