Dark current simulation of InAs/GaSb ii type super-lattice nBn detectors with equivalent material method

Chen Liu; Hongxia Zhu; Xueyan Yang; Hui Zeng; Jian Wang; Yanli Shi

doi:10.1117/12.2541017

18 December 2019 Dark current simulation of InAs/GaSb ii type super-lattice nBn detectors with equivalent material method

Chen Liu, Hongxia Zhu, Xueyan Yang, Hui Zeng, Jian Wang, Yanli Shi

Author Affiliations +

Proceedings Volume 11338, AOPC 2019: Optical Sensing and Imaging Technology; 113380B (2019) https://doi.org/10.1117/12.2541017
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China

Abstract

The type-II InAs/GaSb superlattices have been recognized as popular materials for the third-generation infrared focal plane detectors. In recent years, the performances of the type ii superlattice infrared focal plane have been improved dramatically. High operating temperature can be achieved by using the monopolar barrier structure of InAs/GaSb type ii superlattice material system. In this paper, the nBn type (also known as Bariodes) mid-wavelength infrared detector based on InAs/GaSb type ii superlattice is studied. As the device has no depletion layer, the recombination and trap assisted tunneling effects are inhibited, and the dark currents are effectively reduced. Based on the equivalent material method, the relationship between the dark current and the doping concentration, thickness and composition of the barrier layer and absorption layer was analyzed in detail, and the optimal working condition was pointed out.

Citation Download Citation

Chen Liu, Hongxia Zhu, Xueyan Yang, Hui Zeng, Jian Wang, and Yanli Shi "Dark current simulation of InAs/GaSb ii type super-lattice nBn detectors with equivalent material method", Proc. SPIE 11338, AOPC 2019: Optical Sensing and Imaging Technology, 113380B (18 December 2019); https://doi.org/10.1117/12.2541017

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